(China (Mainland))
Product Summary
The 6MBI100U4B-120-51 is an IGBT module.
Parametrics
6MBI100U4B-120-51 absolute maximum ratings: (1)Collector-Emitter voltage: 1200V; (2)Gate-Emitter voltage: ±20V; (3)Collector current: 150A; (4)Collector Power Dissipation: 520W; (5)Junction temperature: 150℃; (6)Storage temperature: -40 to 125℃.
Features
6MBI100U4B-120-51 features: (1)Zero gate voltage collector current: 1mA; (2)Gate-Emitter leakage current: 200nA; (3)Gate-Emitter threshold voltage: 4.5 to 8.5V; (4)Input capacitance: 11nF.
Diagrams
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 6MBI 25S-120L |
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Negotiable |
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6MBI 35S-120L |
Other |
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Negotiable |
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6MBI 50S-120L |
Other |
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Data Sheet |
Negotiable |
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6MBI100F-060 |
Other |
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Data Sheet |
Negotiable |
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6MBI100FA-060 |
Other |
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Data Sheet |
Negotiable |
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6MBI100FB-060 |
Other |
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Data Sheet |
Negotiable |
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