(China (Mainland))
Product Summary
The 39VF200A90-4C-EK is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The 39VF200A90-4C-EK writes (Program or Erase) with a 3.0-3.6V power supply. The 39VF200A90-4C-EK writes (Program or Erase) with a 2.7-3.6V power supply.
Parametrics
39VF200A90-4C-EK absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (TA = 25℃): 1.0W; (7)Surface Mount Solder Reflow Temperature1: 260℃ for 10 seconds; (8)Output Short Circuit Current: 50 mA.
Features
39VF200A90-4C-EK features: (1)Organized as 128K x16 / 256K x16 / 512K x16; (2)Single Voltage Read and Write Operations, 3.0-3.6V for SST39LF200A/400A/800A; 2.7-3.6V for SST39VF200A/400A/800A; (3)Superior Reliability, Endurance: 100,000 Cycles (typical); Greater than 100 years Data Retention; (4)Low Power Consumption (typical values at 14 MHz), Active Current: 9 mA (typical); Standby Current: 3μA (typical); (5)Sector-Erase Capability, Uniform 2 KWord sectors; (6)Block-Erase Capability, Uniform 32 KWord blocks; (7)Fast Read Access Time, 45 and 55 ns for SST39LF200A; 55 ns for SST39LF400A/800A; 70 ns for SST39VF200A/400A/800A.
Diagrams
