Product Summary

The 2SH24 is a silicon N-channel IGBT. Application is high speed power switching.

Parametrics

2SH24 absolute maximum ratings: (1)Collector to emitter voltage VCES: 600 V; (2)Gate to emitter voltage VGES: ±20 V; (3)Collector current IC: 75 A; (4)Collector peak current ic(peak): 150 A; (5)Collector dissipation PC: 200 W; (6)Channel temperature Tj: 150 °C; (7)Storage temperature Tstg: –55 to +150 °C.

Features

2SH24 features: (1)High speed switching; (2)Low on saturation voltage.

Diagrams

2SH24 pin connection