(China (Mainland))
Product Summary
The 2SD634 is an isc silicon NPN darlington power transistor. Applications are (1)High power switching applications; (2)Hammer drive, pulse motor drive applications.
Parametrics
2SD634 absolute maximum ratings: (1)Collector-base voltage: 80 V; (2)Collector-emitter voltage: 80 V; (3)Emitter-base voltage: 5 V; (4)Collector current-continuous: 7 A; (5)Base current-continuous: 0.2 A; (6)Collector power dissipation @ TC=25℃: 40 W; (7)Junction temperature: 150 ℃; (8)Storage temperature range: -55~150 ℃.
Features
2SD634 features: (1)High DC current gain: hFE= 2000(Min.)@IC= 3.0A; (2)Low saturation voltage: VCE(sat)= 1.5V(Max.)@ IC= 3.0A; (3)Complement to type 2SB674.
Diagrams
