Product Summary

The 2SC503X is a silicon NPN epitaxial type PCT process. It is suitable for high frequency amplifier applicaitons and high speed switching applications.

Parametrics

2SC503X absolute maximum ratings: (1)collector-base voltage, VCBO: 100V; (2)collector-emitter voltage, VCEO: 80V; (3)emitter-base votlage, VEBO: 5V; (4)collector current, IC: 600mA; (5)base current, IB: 100mA; (6)collector power dissipation, PC: 800W; (7)junction temperature, Tj: 175℃; (8)storage temperature range, Tstg: -65 to 175℃.

Features

2SC503X features: (1)high transistion frequency: fT=80MHz typ; (2)high breakdown votlage: VCEO=80V; (3)complementary to 2SA503 and 2SA504.

Diagrams

2SC503X dimensions

2SC5000
2SC5000

Other


Data Sheet

Negotiable 
2SC5001TLQ
2SC5001TLQ

ROHM Semiconductor

Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3

Data Sheet

0-1: $0.63
1-25: $0.55
25-100: $0.42
100-500: $0.28
2SC5001TLR
2SC5001TLR

ROHM Semiconductor

Transistors Bipolar (BJT) NPN 20V 10A

Data Sheet

0-2500: $0.24
2500-5000: $0.24
2SC5002
2SC5002

Other


Data Sheet

Negotiable 
2SC5003
2SC5003

Other


Data Sheet

Negotiable 
2SC5004
2SC5004

Other


Data Sheet

Negotiable