(China (Mainland))
Product Summary
The 2SC503X is a silicon NPN epitaxial type PCT process. It is suitable for high frequency amplifier applicaitons and high speed switching applications.
Parametrics
2SC503X absolute maximum ratings: (1)collector-base voltage, VCBO: 100V; (2)collector-emitter voltage, VCEO: 80V; (3)emitter-base votlage, VEBO: 5V; (4)collector current, IC: 600mA; (5)base current, IB: 100mA; (6)collector power dissipation, PC: 800W; (7)junction temperature, Tj: 175℃; (8)storage temperature range, Tstg: -65 to 175℃.
Features
2SC503X features: (1)high transistion frequency: fT=80MHz typ; (2)high breakdown votlage: VCEO=80V; (3)complementary to 2SA503 and 2SA504.
Diagrams
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 2SC5000 |
Other |
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Data Sheet |
Negotiable |
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2SC5001TLQ |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3 |
Data Sheet |
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2SC5001TLR |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 20V 10A |
Data Sheet |
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2SC5002 |
Other |
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Data Sheet |
Negotiable |
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2SC5003 |
Other |
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Data Sheet |
Negotiable |
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2SC5004 |
Other |
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Data Sheet |
Negotiable |
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