(China (Mainland))
Product Summary
The 2SA1153 is a PNP silicon transistor, designed for general purpose amplifier and high speed switching applications.
Parametrics
2SA1153 absolute maximum ratings: (1)Storage temperature: -55 to +150℃; (2)Junction temperature: 150℃ maximum; (3)Totel power disspation: 600mW; (4)VCBO collector to base voltage: -60V; (5)VCEO collector to emitter voltage: -40V; (6)VEBO emitter to base voltage: -5.0V; (7)IC collector current(DC): -500mA.
Features
2SA1153 features: (1)High frequency current gain; (2)High speed switching; (3)Small output capacitance; (4)Low collector saturation voltage ; (5)Complementary to the NEC 2SC2720 NPN transistor.
Diagrams
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 2SA1153 |
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2SA1006 |
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2SA1006A |
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2SA1006B |
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2SA1008 |
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2SA1009 |
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2SA1009A |
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