(China (Mainland))
Product Summary
The 29LV650UE-90PFTN is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The 29LV650UE-90PFTN can also be reprogrammed in standard EPROM programmers. The 29LV650UE-90PFTN is entirely command set compatible with JEDEC single-power-supply Flash standard.
Parametrics
29LV650UE-90PFTN absolute maximum ratings: (1)Storage Temperature: Tstg: –55 +125 °C; (2)Ambient Temperature with Power Applied: TA: –40 +85 °C; (3)Voltage with Respect to Ground All Pins Except A9, OE, ACC, and RESET: –0.5 VCC +0.5 V; (4)Power Supply Voltage: –0.5 +4.0 V; (5)A9, OE, ACC, and RESET: –0.5 +13.0 V; (6)Power Supply Voltage: VCCq: –0.2 +7.0 V.
Features
29LV650UE-90PFTN features: (1)0.23 um Process Technology; (2)Single 3.0 V read, program and erase Minimizes system level power requirements; (3)Compatible with JEDEC-standards Uses same software commands with single-power supply Flash; (4)Address don’t care during the command sequence; (5)Industry-standard pinouts 48-pin TSOP (I)(Package suffix: TN - Normal Bend Type, TR-Reversed Bend Type); (6)Minimum 100,000 program/erase cycles; (7)High performance 90 ns maximum access time; (8)Flexible sector architecture; (9)One hundred twenty-eight 32K word sectors; (10)Any combination of sectors can be concurrently erased. Also supports full chip erase.
Diagrams
