(China (Mainland))
Product Summary
The 29F400BC-90PFTN is a 4 Megabit, 5.0 volt-only CMOS flash memory device organized as a 512 Kbytes of 8-bits each, or 256 Kbytes of 16 bits each. The device is offered in standard 44-pin SOP and 48-pin TSOP packages. The 29F400BC-90PFTN is designed to be programmed and erased in-system with a 5.0 volt power-supply and can also be reprogrammed in standard EPROM programmers. The 29F400BC-90PFTN is entirely pin and command set compatible with the JEDEC standard for 4 Megabit Flash memory devices. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations.
Parametrics
29F400BC-90PFTN absolute maximum ratings: (1)Storage temperature plastic packages: -65 to +125 °C; (2)Ambient temperature with power applied: -55 to +125 °C; (3)Voltages with Respect to Ground All pins except A9 (Note 1): -2 to +7 V; Vcc (Note 1): -2 to +7 V; A9 (Note 2): -2 to +14 V; (4)Output short circuit current (Note 4): 200 mA.
Features
29F400BC-90PFTN features: (1)5.0 V +/- 10% program and erase: Minimizes system-level power requirements high performance; 90 nS access time; (2)Compatible with JEDEC-standard Commands: Uses software commands, pinouts, and packages following industry standards for single power supply flash memory; (3)Typically 100,000 program/erase cycles; (4)Sector erase architecture: One 16 Kbytes, two 8 Kbytes, one 32 Kbytes, and seven 64 Kbytes; Any combination of sectors can be erased concurrently; also supports full chip erase; (5)Erase suspend/resume: Suspend a sector erase operation to allow a data read in a sector not being erased within the same device; (6)Ready/Busy: RY/BY output pin for detection of programming or erase cycle complet.
Diagrams
