(China (Mainland))
Product Summary
The 29DL324BE-90PFTN is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. The 29DL324BE-90PFTN is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. The 29DL324BE-90PFTN is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsus standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank.
Parametrics
29DL324BE-90PFTN absolute maximum ratings: (1)Storage Temperature Tstg: -55 to +125 °C; (2)Ambient Temperature with Power Applied TA: -40 to +85 °C; (3)Voltage with Respect to Ground All pins except A9, OE, RESET (Note 1)VIN, VOUT: -0.5 to VCC+0.5 V; (4)Power Supply Voltage (Note 1)VCC: -0.5 to +4.0 V; (5)A9, OE, and RESET (Note 2)VIN: -0.5 to +13.0 V; (6)WP/ACC (Note 3)VIN: -0.5 to +10.5 V.
Features
29DL324BE-90PFTN features: (1)Embedded Erase Algorithms; (2)Embedded Program Algorithms; (3)Data Polling and Toggle Bit feature for detection of program or erase cycle completion; (4)Ready/Busy output (RY/BY); (5)Automatic sleep mode; (6)Low VCC write inhibit 2.5 V; (7)Erase Suspend/Resume; (8)Sector group protection; (9)Sector Group Protection Set function by Extended sector group protection command; (10)Fast Programming Function by Extended Command; (11)Temporary sector group unprotection; (12)In accordance with CFI (Common Flash Memory Interface).
Diagrams
